Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
نویسندگان
چکیده
منابع مشابه
Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy.
We study subsurface arsenic dopants in a hydrogen-terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant-related features that fall into two classes, which we call As1 and As2. When imaged in occupied states, the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography and have maximu...
متن کاملRecognizing nitrogen dopant atoms in graphene using atomic force microscopy
Nadine J. van der Heijden,1 Daniël Smith,1 Gaetano Calogero,1,2 Rik S. Koster,3 Daniel Vanmaekelbergh,1 Marijn A. van Huis,3 and Ingmar Swart1 1Condensed Matter and Interfaces, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80 000, 3508 TA Utrecht, The Netherlands 2DTU Natotech, Technical University of Denmark, Building 345E, rsteds Plads, DK-2800 Kongens Lyngby, Denmar...
متن کاملCharacterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunnelling microscopy.
Defects play a key role in determining the properties and technological applications of nanoscale materials and, because they tend to be highly localized, characterizing them at the single-defect level is of particular importance. Scanning tunnelling microscopy has long been used to image the electronic structure of individual point defects in conductors, semiconductors and ultrathin films, but...
متن کاملThree-Dimensional Observation of Dopant Atoms in Quantitative Scanning Transmission Electron Microscopy
One of the ultimate goals in electron microscopy is 3-dimensional (3D) atomic scale information. The main challenge in obtaining 3D information in microscopy originates from the limited depth resolution. The depth resolution of scanning transmission electron microscopy (STEM) remains above ~10 nm, even with state-of the-art STEM with aberration correction [1]. Through-focal series and confocal ...
متن کاملScanning tunneling microscopy and spectroscopy of arsenic antisites in low temperature grown InGaAs
Scanning tunneling microscopy is used to study low temperature grown (LTG) InGaAs, with and without Be doping. The Be-doped material is observed to contain significantly fewer AsGa antisite defects than the undoped material, with no evidence found for Be-As complexes. Annealing of the LTG-InGaAs forms precipitates preferentially in the undoped material. The previously observed dependence of the...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2013
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/26/1/012001